IPP80N06S207AKSA1

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Icandelo lomvelisi	IPP80N06S207AKSA1
Umenzi	Rochester Electronics
Inkcazo	MOSFET N-CH 55V 80A TO220-3-1
Udidi	iimveliso ze-semiconductor ezicacileyo
Usapho	transistors - fets, mosfets - single
Umnqa wobomi:	New from this manufacturer.
Ukuhanjiswa:	DHL FedEx Ups TNT EMS
Intlawulo	T/T Paypal Visa MoneyGram Western Union
Ishiti yedatha	IPP80N06S207AKSA1 PDF

Ubukho

Ikhona evenkileni	9500
Ixabiso lento	$ 0.71000

IPP80N06S207AKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPP80N06S207AKSA1 Iinkcukacha

Uhlobo	Inkcazo
series:	OptiMOS™
package:	Bulk
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	55 V
current - continuous drain (id) @ 25°c:	80A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	6.6mOhm @ 68A, 10V
vgs(th) (max) @ id:	4V @ 180µA
gate charge (qg) (max) @ vgs:	110 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	3.4 pF @ 25 V
fet feature:	-
power dissipation (max):	250W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Through Hole
supplier device package:	PG-TO220-3-1
package / case:	TO-220-3

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