TK100E06N1,S1X

Umfanekiso wereferensi, nceda uqhagamshelane nathi ukuze ufumane umfanekiso wokwenyani

Icandelo lomvelisi	TK100E06N1,S1X
Umenzi	Toshiba Electronic Devices and Storage Corporation
Inkcazo	MOSFET N CH 60V 100A TO-220
Udidi	iimveliso ze-semiconductor ezicacileyo
Usapho	transistors - fets, mosfets - single
Umnqa wobomi:	New from this manufacturer.
Ukuhanjiswa:	DHL FedEx Ups TNT EMS
Intlawulo	T/T Paypal Visa MoneyGram Western Union
Ishiti yedatha	TK100E06N1,S1X PDF

Ubukho

Ikhona evenkileni	932450
Ixabiso lento	$ 2.62000

TK100E06N1,S1X Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TK100E06N1,S1X Iinkcukacha

Uhlobo	Inkcazo
series:	U-MOSVIII-H
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	60 V
current - continuous drain (id) @ 25°c:	100A (Ta)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	2.3mOhm @ 50A, 10V
vgs(th) (max) @ id:	4V @ 1mA
gate charge (qg) (max) @ vgs:	140 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	10500 pF @ 30 V
fet feature:	-
power dissipation (max):	255W (Tc)
operating temperature:	150°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-220
package / case:	TO-220-3

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