EPC2016C

EPC2016C

Umfanekiso wereferensi, nceda uqhagamshelane nathi ukuze ufumane umfanekiso wokwenyani

Icandelo lomvelisi EPC2016C
Umenzi EPC
Inkcazo GANFET N-CH 100V 18A DIE
Udidi iimveliso ze-semiconductor ezicacileyo
Usapho transistors - fets, mosfets - single
Umnqa wobomi: New from this manufacturer.
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Ishiti yedatha EPC2016C PDF

Ubukho

Ikhona evenkileni 134646
Ixabiso lento $ 2.45000

EPC2016C Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

EPC2016C Iinkcukacha

Uhlobo Inkcazo
series:eGaN®
package:Tape & Reel (TR)Cut Tape (CT)
part status:Active
fet type:N-Channel
technology:GaNFET (Gallium Nitride)
drain to source voltage (vdss):100 V
current - continuous drain (id) @ 25°c:18A (Ta)
drive voltage (max rds on, min rds on):5V
rds on (max) @ id, vgs:16mOhm @ 11A, 5V
vgs(th) (max) @ id:2.5V @ 3mA
gate charge (qg) (max) @ vgs:4.5 nC @ 5 V
vgs (max):+6V, -4V
input capacitance (ciss) (max) @ vds:420 pF @ 50 V
fet feature:-
power dissipation (max):-
operating temperature:-40°C ~ 150°C (TJ)
mounting type:Surface Mount
supplier device package:Die
package / case:Die

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