RN1116MFV,L3F

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Icandelo lomvelisi	RN1116MFV,L3F
Umenzi	Toshiba Electronic Devices and Storage Corporation
Inkcazo	TRANS PREBIAS NPN 50V 0.1A VESM
Udidi	iimveliso ze-semiconductor ezicacileyo
Usapho	transistors - bipolar (bjt) - eyodwa, pre-biased
Umnqa wobomi:	New from this manufacturer.
Ukuhanjiswa:	DHL FedEx Ups TNT EMS
Intlawulo	T/T Paypal Visa MoneyGram Western Union
Ishiti yedatha	RN1116MFV,L3F PDF

Ubukho

Ikhona evenkileni	6893
Ixabiso lento	$ 0.02926

RN1116MFV,L3F Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RN1116MFV,L3F Iinkcukacha

Uhlobo	Inkcazo
series:	-
package:	Tape & Reel (TR)
part status:	Active
transistor type:	NPN - Pre-Biased
current - collector (ic) (max):	100 mA
voltage - collector emitter breakdown (max):	50 V
resistor - base (r1):	4.7 kOhms
resistor - emitter base (r2):	10 kOhms
dc current gain (hfe) (min) @ ic, vce:	50 @ 10mA, 5V
vce saturation (max) @ ib, ic:	300mV @ 250µA, 5mA
current - collector cutoff (max):	500nA
frequency - transition:	250 MHz
power - max:	150 mW
mounting type:	Surface Mount
package / case:	SOT-723
supplier device package:	VESM

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